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MDD 312
3000
R thKA K/W
2500
2000
0.03
0.06
0.1
0.15
0.2
P tot
[W]
1500
1000
Circuit
B6U
0.3
0.4
3 x MDD312
500
0
0
200
400
600
800
0
25
50
75
100
125
150
I FAVM [A]
T A [°C]
Fig. 8 Three phase rectifier bridge: Power dissipation vs. direct output current & ambient temperature
0.20
R thJC for various conduction angles d :
0.15
Z thJC
0.10
[K/W]
0.05
30°
60°
120°
180°
DC
d R thJC (K/W)
DC 0.120
180°C 0.128
120°C 0.135
60°C 0.153
30°C 0.185
Constants for Z thJC calculation:
i R thi (K/W) t i (s)
0.00
10 -3
10 -2
10 -1
t [s]
10 0
10 1
10 2
1
2
3
4
0.0058
0.031
0.072
0.0112
0.00054
0.098
0.54
12
Fig. 9 Transient thermal impedance junction to case (per diode)
0.25
0.20
Z thJK
0.15
[K/W]
R thJK for various conduction angles d:
d R thJK (K/W)
DC 0.160
180°C 0.168
120°C 0.175
60°C 0.193
30°C 0.225
0.10
30°
60°
Constants for Z thJK calculation:
0.05
0.00
10 -3
10 -2
10 -1
t [s]
10 0
120°
180°
DC
10 1
10 2
i
1
2
3
4
5
R thi (K/W) t i (s)
0.0058 0.00054
0.031 0.098
0.072 0.54
0.0112 12
0.04 12
Fig. 10 Transient thermal impedance junction to heatsink (per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
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20130813g
4-4
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